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Philips BFG94 NPN 6 GHz Wideband Transistor Data Sheet

Summary

The BFG94 is a high power gain, low noise figure NPN 6 GHz wideband transistor designed for demanding communication and instrumentation systems. This comprehensive data sheet provides complete product specifications, detailing everything from operating characteristics and limiting values to detailed performance metrics like maximum unilateral power gain and intermodulation distortion. It serves as an indispensable technical resource, offering precise electrical parameters and thermal guidelines necessary for reliable high-frequency circuit design using the compact SOT223 package.

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查询BFG94供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

BFG94 NPN 6 GHz wideband transistor

Product specification September 1995

File under Discrete Semiconductors, SC14

Page Summary Contents For Philips BFG94 NPN 6 GHz Wideband Transistor Data Sheet

Page 1 查询BFG94供应商 DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14
Page 2 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure emitter Low intermodulation distortion Gold metalliza...
Page 3 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC...
Page 4 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector c...
Page 5 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 1 n F INPUT SLUG TUNER input output input DUT 75 Ω TEST FIXTURE 33 Ω 33 Ω BIAS OUTPUT SLUG TUNER output MBB780 MBB789 L...
Page 6 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 MBB791 MCD089 handbook, halfpage handbook, halfpage re (GHz) (V) I (m A)C CE IC = ic = 0; f = 1 MHz. VCE 10 V; f = 1 GH...
Page 7 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 MBB794 MBB795 handbook, halfpage handbook, halfpage f (MHz) VCE 8 V; f = 1 GHz. Gmax maximum available stable gain. Ic ...
Page 8 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 MCD094 handbook, halfpage f = 2 GHz 1 GHz 500 MHz VCE 8 V. Fig.14 Minimum noise figure as a function of collector curre...
Page 9 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth stability circle un st ab le re gi on min OPT MBB788 Ic 15 m A; VCE 10 V; f = 500 MHz. Fig.15 ...
Page 10 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth 3 GHz 40 MHz MBB784 IC 45 m A; VCE 10 V. ZO Ω. Fig.17 Common emitter input reflection coeffici...
Page 11 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth 90° 150° 30° 40 MHz 3 GHz MBB785 IC 45 m A; VCE 10 V. Fig.19 Common emitter reverse transmissi...
Page 12 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 e1 Mbp detail X s...
Page 13 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for produc...

Manual Details

Brand Philips
Pages 13
File Size 104.13 KB
Published July 07, 2026
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Frequently Asked Questions

What are the absolute maximum voltage limits for this transistor?

The limiting voltages are CBOV up to -15 V, CEOV up to -12 V, and EBOV up to -2 V.

What precautions must I take regarding heat dissipation?

It is noted that the collector pad is for good heat transfer, and total power dissipation must not exceed 700 mW (up to T = 140 °C).

Can this device be used in life support systems?

No, these products are explicitly not designed for use in life support appliances or systems.

What is the specified maximum unilateral power gain ($G_m$)?

The maximum unilateral power gain ranges from 11.5 to 13.5 dB when measured at T = 25 °C ambient.