Philips BFG67W BFG67W X; BFG67W XR NPN 8 GHz Wideband Transistor User Manual
Summary
The BFG67W is a high-performance NPN 8 GHz wideband transistor designed for critical RF applications, including analog satellite television and portable communication equipment. This technical manual provides comprehensive resources and detailed specifications for engineers utilizing the component. It covers crucial electrical characteristics such as power gain, transition frequency, absolute maximum ratings, and thermal performance curves, making it an essential reference for designing reliable circuits operating in the high GHz spectrum.
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor
Product specification August 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors
Page Summary Contents For Philips BFG67W BFG67W X; BFG67W XR NPN 8 GHz Wideband Transistor User Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 16 |
| File Size | 105.54 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What are the intended applications for the BFG67W transistor?
It is designed for wideband PIN electronics used in GHz range applications like analog satellite television systems and portable RF communication equipment.
What are the absolute maximum ratings (limiting values) of this transistor?
The collector-to-emitter voltage is -10 V, maximum collector current is -50 mA, and total power dissipation up to 85°C is specified as -500 mW.
How does power derating work for the BFG67W?
As temperature increases (up to 150°C), the maximum permitted power dissipation decreases gradually, following a specific curve shown in Figure 3.