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Philips BGM1011 Wideband MMIC Amplifier Data Sheet

Summary

This Philips BGM1011 MMIC wideband amplifier datasheet provides complete technical specifications for silicon monolithic microwave integrated circuit applications. Covers 50-ohm internal matching, gain characteristics up to 37dB at 2GHz, noise figure performance, saturated output power, and isolation parameters for LNB IF amplifiers, cable systems, and general-purpose RF amplification applications.

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DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

MBD128

BGM1011 MMIC wideband amplifier Preliminary specification 2002 Jan 14

Page Summary Contents For Philips BGM1011 Wideband MMIC Amplifier Data Sheet

Page 1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGM1011 MMIC wideband amplifier Preliminary specification 2002 Jan 14
Page 2 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 FEATURES PINNING Internally matched to 50 Ω PIN DESCRIPTION Very high gain (up to 37 d B at 2 Ghz) VS Sloped gain curve...
Page 3 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to solder point Ptot...
Page 4 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGM1011 MMIC. The device is internally mat...
Page 5 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 100MHz 0.2 IS 25.5 m A; VS 5.0 V; PD −35 d Bm; ZO Ω. 1.0 Fig.3 Input reflection coefficient (s11); typical values. 3GHz...
Page 6 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 f (MHz) f (MHz) PD −35 d Bm; ZO Ω. (1) IS 19.5 m A; VS= 4.5 IS 25.5 m A; VS 5.0 V; PD −35 d Bm; ZO Ω. (2) IS 25.5 m A; ...
Page 7 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 f (MHz) f (MHz) ZO Ω. (1) IS 19.5 m A; VS= 4.5 (2) IS 25.5 m A; VS= 5.0 IS 25.5 m A; VS 5.0 V; ZO Ω. (3) IS 29.8 m A; V...
Page 8 ca tt er in ar am et er s: 5. .5 −3 am °C Philips Semiconductors Preliminary specification IT (d IT IT IT MMIC wideband amplifier BGM1011 (r at io eg (r at io (d eg (r at io (d eg (r at io (d eg 0. .3...
Page 9 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 pin 1 index e1 BMbp Lp detail X scale DIMENSIONS (mm ar...
Page 10 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS(1) STATUS(2) Objective data Development This data sheet contain...
Page 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 For sales offices addresses send e-mail to: sal...