Panasonic UNR32A5 User Guide
Summary
This comprehensive technical manual details the specifications for the high-performance UNR32A5 semiconductor transistor. It provides engineers with full insight into absolute maximum ratings, detailed electrical characteristics, and operational performance curves using standardized testing methods. Designed for those building general commercial electronics, communication devices, and measuring instruments, this guide ensures accurate selection. Users requiring components for critical or specialized industrial applications must consult technical sales staff to guarantee reliability.
Page 1 Text Content
查询UNR32A5供应商 Transistors with built-in Resistor
UNR32A5 Silicon NPN epitaxial planar type
Unit: mm
For digital circuits +0.05 0.33 –0.02 0.10+0.05 –0.02
Features Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption 0.23+0.05 –0.02
Absolute Maximum Ratings Ta = 25°C 5°
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Collector current IC m A
1: Base Total power dissipation PT m W 2: Emitter 3: Collector
Junction temperature Tj °C
SSSMini3-F1 Package
Storage temperature Tstg −55 to +125 °C
Marking Symbol: HC
Internal Connection
to .0
0. in 0. ±0 .0
Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit
0. ax 0. in
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 Collector-emitter voltage (Base open) VCEO IC = 2 m A, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 m A Forward current transfer ratio h FE VCE = 10 V, IC = 5 m A Collector-emitter saturation voltage VCE(sat) IC = 10 m A, IB = 0.3 m A 0.25 Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 Input resistance R1 −30% +30% kΩ Transition frequency f T VCB = 10 V, IE = −2 m A, f = 200 MHz MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
SJH00057BED 1Publication date: October 2003
Page Summary Contents For Panasonic UNR32A5 User Guide
Manual Details
| Brand | Panasonic |
|---|---|
| Pages | 3 |
| File Size | 75.59 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What is the maximum total power dissipation rating for this transistor?
The total power dissipation (P) is rated at 100 mW.
Where can I find information on special applications, such as automotive or aerospace use?
For any applications requiring exceptional quality and reliability, users should consult the sales staff in advance.
What is the designated temperature range for product storage?
The Mini3-F1 package supports a storage temperature ($T_{stg}$) ranging from -55 to +125 °C.
What are the primary benefits of using this UNR32A5 transistor in equipment design?
It is suitable for high-density mounting, downsizing equipment, and contributing to low power consumption.