Panasonic 2SB970 User Guide
Summary
The 2SB970 is a high-performance silicon PNP epitaxial transistor designed for robust low-voltage output amplification in demanding electronic circuits. This comprehensive manual provides engineers and circuit designers with precise specifications on electrical performance, stability characteristics, temperature profiles, and saturation voltages. Use this detailed technical guide to ensure optimal selection and reliable integration of the component into your miniature electronic equipment or power management systems.
Page 1 Text Content
查询2SB0970供应商 Transistor
2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification
Unit: mm
+0.2 2.8 –0.3 Features +0.25 1.5 –0.050.65±0.15 0.65±0.15
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit
0.1 to 0.3
Collector to base voltage VCBO –15
Collector to emitter voltage VCEO –10 Emitter to base voltage VEBO –7
Peak collector current ICP –1 0.
1:Base JEDEC:TO–236 2. –0 .0
2:Emitter EIAJ:SC–59 1. –0 .1
Collector current IC – 0.5 9± 0.
3:Collector Mini Type Package
Collector power dissipation PC m W
Junction temperature Tj ˚C Marking symbol : 1R
Storage temperature Tstg –55 ~ +150 ˚C
to .1
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit 0. –0 .0 0. –0 .0
Collector cutoff current ICBO VCB = –10V, IE = 0 –100 n A Collector to base voltage VCBO IC = –10µA, IE = 0 –15 Collector to emitter voltage VCEO IC = –1m A, IB = 0 –10 Emitter to base voltage VEBO IE = –10µA, IC = 0 –7
*1 h FE1 VCE = –2V, IC = –0.5A*2
Forward current transfer ratio
h FE2 VCE = –2V, IC = –1A*2
Collector to emitter saturation voltage VCE(sat) IC = –0.4A, IB = –8m A – 0.16 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –0.4A, IB = –8m A – 0.8 –1.2 Transition frequency f T VCB = –10V, IE = 50m A, f = 200MHz MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz p F
*2 Pulse measurement
*1h FE1 Rank classification
Rank h FE1 130 ~ 220 180 ~ 350 Marking Symbol 1RR 1RS
Page Summary Contents For Panasonic 2SB970 User Guide
Manual Details
| Brand | Panasonic |
|---|---|
| Pages | 2 |
| File Size | 28.41 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
What is the maximum junction temperature for this transistor?
The maximum Junction Temperature (Tj) is 150°C.
What are the absolute maximum ratings for collector power dissipation?
The absolute maximum rating for Collector power dissipation (Pc) is 200 mW.
How is the device packaged and what units does it accommodate?
It uses a Mini type package, allowing downsizing of equipment and automatic insertion through tape packing/magazine.
What voltage range should be monitored to calculate the Collector to emitter saturation voltage (Vce(sat))?
Vce(sat) is measured when the collector current (Ic) is –0.4A and the emitter current (Ie) is –8mA.