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Panasonic 2SK3193 User Guide

Summary

This technical document provides comprehensive specifications for the 2SK3193 Silicon N-channel power MOSFET, a high-speed component known for low ON resistance and avalanche capability. Ideal for professional engineers and system designers building standard electronic equipment—such as communication devices or industrial appliances—this manual details electrical characteristics, absolute ratings, switching times, and optimal operating guidelines to ensure reliable power management applications.

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Page 1 Text Content

This product complies with the Ro HS Directive (EU 2002/95/EC).

Power MOSFETs

2SK3193 Silicon N-channel power MOSFET

Unit: mm

For switching 15.0±0.3 5.0±0.2

Features

Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 2.0±0.2 2.0±0.1

Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit

Drain-source surrender voltage VDSS 10.9±0.5

1: Gate

Gate-source surrender voltage VGSS ±30

2: Drain

Drain current ID ±20 3: Source

EIAJ: SC-92

Peak drain current IDP ±80

TOP-3F-B1 Package

Avalanche energy capability * EAS m J

Marking Symbol: K3193 .2 ±0 .5 .0 ±0 .5

Power dissipation PD

ol de ip

Ta = 25°C

Internal Connection

Channel temperature Tch °C Storage temperature Tstg −55 to +150 °C Note) L = 1 m H, IL = 20 A, 1 pulse, Ta = 25°C

Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = 1 m A, VGS = 0 Drain-source cutoff current IDSS VDS = 280 V, VGS = 0 µA Gate-source cutoff current IGSS VGS = ±30 V, VDS = 0 ±1 µA Gate threshold voltage Vth VDS = 10 V, ID = 1 m A Drain-source ON resistance RDS(on) VGS = 10 V, ID = 10 A mΩ Forward transfer admittance Yfs VDS = 10 V, ID = 10 A Short-circuit forward transfer capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 3 900 p F (Common source) Short-circuit output capacitance Coss 1 340 p F (Common source) Reverse transfer capacitance Crss p F (Common source) Turn-on delay time td(on) VDD = 150 V, ID = 10 A ns Rise time tr RL = 15 Ω, VGS = 10 V ns Turn-off delay time td(off) ns Fall time tf ns

SJG00039AED 1Publication date: November 2004

Page Summary Contents For Panasonic 2SK3193 User Guide

Page 1 This product complies with the Ro HS Directive (EU 2002/95/EC). Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit: mm For switching 15.0±0.3 5.0±0.2 Features Avalanche energy capability guaran...
Page 2 This product complies with the Ro HS Directive (EU 2002/95/EC). 2SK3193 ra in ur re nt Electrical Characteristics (continued) TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Diode forward...
Page 3 This product complies with the Ro HS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) ...

Manual Details

Brand Panasonic
Pages 3
File Size 101.13 KB
Published June 20, 2026
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Frequently Asked Questions

What regulations must this product adhere to?

The product complies with the RoHS Directive (EU 2002/95/EC).

What is the maximum drain current capability?

The absolute maximum rating for the drain current (Id) is ±20 A. The peak drain current (I DP) is ±80 A.

How should I calculate safe power dissipation?

Safe operation area P allows different power dissipations based on ambient temperature and drain-source voltage thresholds, such as 3 W at typical operating conditions without a heat sink.

What kind of applications are standard or recommended for this device?

It is intended for standard applications like office equipment, communications equipment, measuring instruments, and household appliances.