Panasonic 2SK0665 (2SK665) Data Manual
Summary
This small signal N-Channel Silicon MOS FET is engineered for reliable, high-speed switching applications that demand low drive currents and high input impedance. The accompanying technical datasheet provides comprehensive electrical specifications, including absolute maximum ratings, detailed on/off resistance metrics, and timing parameters essential for precise circuit design. It is the ideal component for professional electronics engineers building standard general electronic equipment requiring efficient power management and robust performance across diverse operational temperatures.
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查询2SK0665供应商 Silicon MOS FETs (Small Signal)
2SK0665 (2SK665) Silicon N-Channel MOS FET
unit: mm
For switching –0.0 –0.05
Features High-speed switching Small drive current owing to high input inpedance High electrostatic breakdown voltage
Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Ratings Unit Drain to Source voltage VDS Gate to Source voltage VGSO 1: Gate
Drain current ID m A 2: Source EIAJ: SC-70 3: Drain SMini3-G1 Package
Max drain current IDP m A Allowable power dissipation PD m W Marking Symbol: 3O Channel temperature Tch °C
Internal Connection
Storage temperature Tstg −55 to +150 °C
to .1 0. 9± 0. 1. 0. (0 .4
Electrical Characteristics (Ta = 25°C) 5° Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 µA Gate to Source leakage current IGSS VGS = 8V, VDS = 0 µA
Drain to Source breakdown voltage VDSS ID = 100µA, VGS = 0 Gate threshold voltage Vth ID = 100µA, VDS = VGS 1.5 3.5
Drain to Source ON-resistance RDS(on) ID = 20m A, VGS = 5V Forward transfer admittance | Yfs | ID = 20m A, VDS = 5V, f = 1k Hz m S High level output voltage VOH VDD = 5V, VGS = 1V, RL = 200Ω 4.5 Low level output voltage VSL VDD = 5V, VGS = 5V, RL = 200Ω
Input resistance R1 + R2 kΩ
Turn-on time ton VDD = 5V, VGS = 0 to 5V, RL = 200Ω µs
Turn-off time toff VDD = 5V, VGS = 5 to 0V, RL = 200Ω µs *1 Resistance ratio R1/R2 = 1/50 *2 ton, toff measurement circuit *3 Pulse measurement
Vout 200Ω
VGS = 5V
VDD = 5V Vout
ton toff
Note) The part number in the parenthesis shows conventional part number.
Page Summary Contents For Panasonic 2SK0665 (2SK665) Data Manual
Manual Details
| Brand | Panasonic |
|---|---|
| Pages | 3 |
| File Size | 71.45 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What are the maximum drain-to-source voltage (Vds) and gate-to-source voltage (Vgs) ratings?
The absolute maximum rating for Drain to Source voltage is 20V, and for Gate to Source voltage is 8V.
What is the typical on-resistance (Rds(on)) of the FET under normal conditions?
At a drain current of 20mA and V=5V, the typical drain-to-source ON-resistance is 50 ohm.
Are these microchips suitable for critical applications like automotive or aerospace?
No. Users must consult sales staff for special applications requiring exceptional quality and reliability, such as aviation or automobiles.
What are the turn-on and turn-off times for this component?
The typical turn-on time (t_on) is 1µs, and the typical turn-off time (t_off) is also 1µs.