Panasonic 2SA0777 (2SA777) Data Manual

查询2SA0777供应商 Transistors

2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Unit: mm

Complementary to 2SC1509

Features High collector-emitter voltage (Base open) VCEO

Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier.

Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −80 0.45+0.2

Collector-emitter voltage (Base open) VCEO −80 (1.27)(1.27)

1 : Emitter

Emitter-base voltage (Collector open) VEBO −5

2 : Collector Collector current IC − 0.5 3 : Base EIAJ : SC-51

Peak collector current ICP −1

TO-92L-A1 Package

Collector power dissipation PC Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −80 Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −80 Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA

Forward current transfer ratio *1 h FE1 VCE = −10 V, IC = −150 m A

h FE2 VCE = −5 V, IC = −500 m A

Collector-emitter saturation voltage VCE(sat) IC = −500 m A, IB = −50 m A − 0.2 − 0.4 Base-emitter saturation voltage VBE(sat) IC = −500 m A, IB = −50 m A − 0.85 −1.2 Transition frequency f T VCB = −10 V, IE = 50 m A, f = 200 MHz MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz p F (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Palse measurement

*2: Rank classification Rank h FE1 90 to 155 130 to 220

Note) The part number in the parenthesis shows conventional part number.

SJC00004BED 1Publication date: November 2002