Panasonic 2SK0656(2SK656) Data Manual

查询2SK0656供应商 Silicon MOS FETs (Small Signal)

2SK0656 (2SK656) Silicon N-Channel MOS FET

unit: mm

For switching

Features High-speed switching 0.75 max. Small drive current owing to high input inpedance High electrostatic breakdown voltage

Absolute Maximum Ratings (Ta = 25°C)

Parameter Symbol Ratings Unit (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1

Drain to Source breakdown voltage VDSS Gate to Source voltage VGSO

1: Source

Drain current ID m A

2: Drain Max drain current IDP m A 3: Gate NS-B1 Package

Allowable power dissipation PD m W

Channel temperature Tch °C Internal Connection

Storage temperature Tstg −55 to +150 °C

Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 µA

Gate to Source leakage current IGSS VGS = 8V, VDS = 0 µA

Drain to Source breakdown voltage VDSS ID = 100µA, VGS = 0 Gate threshold voltage Vth ID = 100µA, VDS = VGS 1.5 3.5 Drain to Source ON-resistance RDS(on) ID = 20m A, VGS = 5V Forward transfer admittance | Yfs | ID = 20m A, VDS = 5V, f = 1k Hz m S High level output voltage VOH VDD = 5V, VGS = 1V, RL = 200Ω 4.5 Low level output voltage VOL VDD = 5V, VGS = 5V, RL = 200Ω

Input resistance R1 + R2 kΩ Input capacitance (Common Source) Ciss p F Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz 4.5 p F Reverse transfer capacitance (Common Source) Crss 1.1 p F

Turn-on time ton VDD = 5V, VGS = 0 to 5V, RL = 200Ω µs

Turn-off time toff VDD = 5V, VGS = 5 to 0V, RL = 200Ω µs *1 Resistance ratio R1/R2 = 1/50 *2 Pulse measurement

Note) The part number in the parenthesis shows conventional part number.