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Panasonic 2SK0655(2SK655) User Manual

Summary

The 2SK0655 is a high-speed, small signal N-Channel MOS FET designed for efficient switching in standard electronic equipment. This comprehensive manual provides detailed technical specifications, including absolute maximum ratings and crucial electrical performance data such as gate threshold voltage and drain-source on-resistance. It serves electronics engineers and designers who require reliable components for general applications, including communication systems, industrial controls, and consumer appliances.

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查询2SK0655供应商 Silicon MOS FETs (Small Signal)

2SK0655 (2SK655) Silicon N-Channel MOS FET

unit: mm

For switching 4.0±0.2 2.0±0.2

Features 0.75 max. High-speed switching Allowing to supply with the radial taping

Absolute Maximum Ratings (Ta = 25°C) 0.45+0.20

Parameter Symbol Ratings Unit

Drain to Source voltage VDS

Gate to Source voltage VGSO 1: Source 2: Drain

Drain current ID m A

3: Gate

Max drain current IDP m A

NS-B1 Package

Allowable power dissipation PD m W

Channel temperature Tch °C Internal Connection

Storage temperature Tstg −55 to +150 °C

Electrical Characteristics (Ta = 25°C) 3. 0± 0. 7.

Parameter Symbol Conditions min typ max Unit

Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 µA Gate to Source leakage current IGSS VGS = 8V, VDS = 0 µA Drain to Source breakdown voltage VDSS ID = 100µA, VGS = 0 Gate threshold voltage Vth ID = 100µA, VDS = VGS 1.5 3.5 Drain to Source ON-resistance RDS(on) ID = 20m A, VGS = 5V Forward transfer admittance | Yfs | ID = 20m A, VDS = 5V, f = 1k Hz m S Input capacitance (Common Source) Ciss p F Output capacitance (Common Source) Coss VDS = 5V, VGS = 0, f = 1MHz p F Reverse transfer capacitance (Common Source) Crss 0.5 p F Turn-on time ton VDD = 5V, VGS = 0 to 5V, RL = 200Ω ns Turn-off time toff VDD = 5V, VGS = 5 to 0V, RL = 200Ω ns * ton, toff measurement circuit

Vout 200Ω

VGS = 5V

VDD = 5V Vout

ton toff

Note) The part number in the parenthesis shows conventional part number.

Page Summary Contents For Panasonic 2SK0655(2SK655) User Manual

Page 1 查询2SK0655供应商 Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching 4.0±0.2 2.0±0.2 Features 0.75 max. High-speed switching Allowing to supply with the radia...
Page 2 Silicon MOS FETs (Small Signal) 2SK0655 Inp ut ca pa cita nc e ( Co mm on so urc e) utp ut ca pa cita nc e ( Co mm on so urc e) In pu t v ol ta ge Re ver se tra nsf er cap aci tan ce Co mm on sou rce ...
Page 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authori...

Manual Details

Brand Panasonic
Pages 3
File Size 68.28 KB
Published June 16, 2026
1 views

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Frequently Asked Questions

What are the absolute maximum ratings for the 2SK0655 FET?

Maximum drain current (I_D) is 100 mA, max gate current (I_G) is 200 mA, and allowable power dissipation (P) is 200 mW.

What is the typical on-resistance (RDS(on)) at standard operating conditions?

The typical drain to source ON-resistance (RDS(on)) is 50 Ω when I = 20 mA and V = 5V.

Is there a limit on the ambient temperature range for this component?

The internal connection channel temperature (T_ch) operates up to 150 °C, but storage temperature ranges from -55 to +150 °C.

What specific applications should I consult sales staff about before use?

Consultation is required for special applications like aerospace or automobiles, as well as any non-standard intended uses.