Fairchild NZT651 User's Manual
Summary
The NZT651 is a high-speed NPN current driver transistor ideal for power amplifier, regulator, and efficient switching circuits. This comprehensive manual provides critical technical documentation, including detailed absolute maximum ratings, full electrical characteristics, saturation voltage curves, and thermal handling parameters. It serves as an essential guide for electronics engineers and designers building robust, reliable power management systems.
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Discrete POWER & Signal Technologies
NZT651
SOT-223
NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 IC Collector Current - Continuous 4.0
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units
*NZT651
PD Total Device Dissipation 1.2
Derate above 25°C 9.7 m W/°C
RθJA Thermal Resistance, Junction to Ambient °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
Page Summary Contents For Fairchild NZT651 User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 4 |
| File Size | 112.23 KB |
| Published | July 10, 2026 |
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Frequently Asked Questions
What current range should I use the NZT651 for?
It is designed for power amplifier, regulator, and switching circuits where speed is important.
How must I account for reduced power dissipation at high ambient temperatures?
When operating above 25°C, the device's Total Device Dissipation must be derated using a rate of 9.7 mW/°C.
What are the typical saturation voltages when running the transistor at 1.0 A?
The Collector-Emitter Saturation Voltage (VCEsat) is typically 0.3 V, and the Base-Emitter Saturation Voltage (BEsat) is 1.2 V.