Fairchild FDC638P User's Manual

September 2001

FDC638P P-Channel 2.5V Power Trench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced

• –4.5 A, –20 V. RDS(ON) = 48 mΩ @ VGS = –4.5 V

using Fairchild Semiconductor’s advanced

RDS(ON) = 65 mΩ @ VGS = –2.5 V

Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain

• Low gate charge (10 n C typical)

low gate charge for superior switching performance

These devices are well suited for battery power • High performance trench technology for extremely applications: load switching and power management,

low RDS(ON)

battery charging circuits, and DC/DC conversion.

• Super SOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

TM GSuper SOT -6

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –4.5 A – Pulsed –20

Power Dissipation for Single Operation (Note 1a) 1.6 PD (Note 1b) 0.8

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .638 FDC638P 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDC638P Rev F1 (W)