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Fairchild NDT014 User Guide

Summary

This power MOSFET is an N-Channel Enhancement Mode transistor (NDT014), engineered with high density technology to deliver superior switching performance and minimal on-state resistance ($R_{DS(ON)}$). It is designed for low voltage applications requiring rapid switching and efficient power handling, such as DC motor control and DC/DC conversion. This comprehensive manual provides all necessary technical details, including absolute maximum ratings, full electrical characteristics (static, dynamic, and switching), and thermal guidelines required to ensure reliable system design.

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Page 1 Text Content

September 1996

NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cell

High density cell design for extremely low RDS(ON).

density, DMOS technology. This very high density process is

High power and current handling capability in a widely used

especially tailored to minimize on-state resistance and provide

surface mount package.

superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

SG SG

Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter NDT014 Units

VDSS Drain-Source Voltage

VGSS Gate-Source Voltage ±20

ID Drain Current - Continuous (Note 1a) ±2.7

- Pulsed ±10

PD Maximum Power Dissipation (Note 1a)

(Note 1b) 1.3

(Note 1c)

TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W

Thermal Resistance, Junction-to-Case (Note 1) °C/W

RθJC * Order option J23Z for cropped center drain lead.

© 1997 Fairchild Semiconductor Corporation NDT014 Rev. C1

Page Summary Contents For Fairchild NDT014 User Guide

Page 1 September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. tra...
Page 2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Ga...
Page 3 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Di...
Page 4 IN (A , N LI ZE (O Typical Electrical Characteristics IN -S -R IS TA IN -S (A V = 10V GS V = 5.5VGS V , DRAIN-SOURCE VOLTAGE (V) I , DRAIN CURRENT (A) DS Figure 1. On-Region Characteristics. Figure 2....
Page 5 Typical Electrical Characteristics (continued) IT (p F) LI ZE IN -S LT = 250µAD V = 0VGS 0.5 T = 125°CJ T , JUNCTION TEMPERATURE (°C) V , BODY DIODE FORWARD VOLTAGE (V) SD Figure 7. Breakdown Voltage ...
Page 6 r( t), LI ZE FF TI Typical Electrical Characteristics (continued) TR IE TH IS TA , T TA (S IE FS T = -55°CJ V = 10VDS 100us 1ms 25°C IMIT RDS(ON) L 100ms1s10s V = 10V GS SINGLE PULSE R = 42 C/W θJA T ...
Page 7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ISOP...

Manual Details

Brand Fairchild
Pages 7
File Size 81.54 KB
Published June 18, 2026
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Frequently Asked Questions

What is the operating temperature range for this transistor?

The NDT014 can operate and store up to 150°C.

What types of applications are transistors best suited for?

They are particularly suitable for low voltage DC motor control and DC/DC conversion where fast switching is required.

How does the on-state resistance (RDS(ON)) compare in different scenarios?

Typical static drain-source on-resistance is 0.2 ohms at V=10V and I=1.6A.

What are the maximum ratings for power dissipation and drain current?

Maximum Power Dissipation is 3W, and the Continuous Drain Current is rated up to -2.7 A.