Fairchild FQP6N60C FQPF6N60C User's Manual
Summary
This advanced N-Channel MOSFET is engineered for high-efficiency power conversion and exceptional switching performance. Designed with proprietary DMOS technology, it features a robust 600V rating and 5.5A continuous drain current capacity, making it ideal for demanding applications. The accompanying manual provides comprehensive technical data, including detailed electrical specifications, thermal characteristics, and reliable operating guidelines. This component is essential for engineers developing switched mode power supplies, active power factor correction (PFC) circuits, and sophisticated electronic lamp ballasts requiring fast transient response.
Page 1 Text Content
FQ P6N 60C /FQ PF6N 60C
QFET®
FQP6N60C/FQPF6N60C 600V N-Channel MOSFET
General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 n C) planar stripe, DMOS technology. Low Crss ( typical 7 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP6N60C FQPF6N60C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 5.5 5.5 *
- Continuous (TC = 100°C) 3.3 3.3 *
IDM Drain Current - Pulsed (Note 1) 22 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 5.5 EAR Repetitive Avalanche Energy (Note 1) 12.5 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 1.0 0.31 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol Parameter FQP6N60C FQPF6N60C Units RθJC Thermal Resistance, Junction-to-Case 1.0 3.2 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
Page Summary Contents For Fairchild FQP6N60C FQPF6N60C User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 926.03 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What applications are these N-Channel MOSFETs best suited for?
They are well-suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
What is the maximum continuous drain current rating at 25°C?
The continuous drain current (ID) is rated at 5.5 A when operating at a temperature of 25°C.
What are the operating temperature limits for this MOSFET?
The defined operating and storage temperature range for the device is -55 to +150 °C.
Are these components safe for use in life support systems?
No, Fairchild's products are not authorized for use as critical components in life support devices or systems without express written approval.