Fairchild FQP15P12 FQPF15P12 User Guide
Summary
The FQP15P12/FQPF15P12 is a high-performance P-Channel MOSFET power transistor designed for demanding low-voltage applications. This manual provides comprehensive technical data, including absolute maximum ratings, thermal characteristics, and detailed electrical specifications necessary for robust circuit design. Featuring fast switching, minimal on-state resistance, and high temperature resilience, this component is ideally suited for engineers developing efficient DC/DC converters, advanced audio amplifiers, and reliable DC motor control systems.
Page 1 Text Content
FQ P15P12/FQ PF15P12
QFET®
FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 29 n C) planar stripe, DMOS technology. Low Crss ( typical 110 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well
175°C maximum junction temperature rating
suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP15P12 FQPF15P12 Units VDSS Drain-Source Voltage -120 ID Drain Current - Continuous (TC = 25°C) -15 -15 *
- Continuous (TC = 100°C) -10.6 -10.6 *
IDM Drain Current - Pulsed (Note 1) -60 -60 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -15 EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.67 0.27 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol Parameter FQP15P12 FQPF15P12 Units RθJC Thermal Resistance, Junction-to-Case 1.5 3.66 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2003 Fairchild Semiconductor Corporation Rev. A, December 2003
Page Summary Contents For Fairchild FQP15P12 FQPF15P12 User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 867.28 KB |
| Published | July 22, 2026 |
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Frequently Asked Questions
What are the maximum continuous drain current limits for this MOSFET?
The FQP15P12 supports -15A continuous drain current at 25°C, while the FQPF15P12 supports -15A continuous drain current at 25°C.
What is the maximum operating temperature range for the device?
The product has an operating and storage temperature range of -55 to +175 °C.
Is this MOSFET suitable for high energy pulse applications like audio amplifiers?
Yes, it utilizes advanced technology designed to provide superior switching speed and withstand high energy pulses in avalanche and commutation modes, making it suited for low voltage applications such as audio amplifiers.
What is the typical on-resistance (Rds(on)) of the FQPF15P12?
The typical static drain-source on-resistance (DS(on)) for the FQPF15P12 at -10V and -7.5A is 0.2 Ω.