Fairchild FDP6670AL FDB6670AL User's Manual

May 2003

FDP6670AL/FDB6670AL N-Channel Logic Level Power Trench MOSFET

General Description Features

This N-Channel Logic Level MOSFET has been

• 80 A, 30 V RDS(ON) = 6.5 mΩ @ VGS = 10 V

designed specifically to improve the overall efficiency of

RDS(ON) = 8.5 mΩ @ VGS = 4.5 V

DC/DC converters using either synchronous or conventional switching PWM controllers.

• Critical DC electrical parameters specified at

These MOSFETs feature faster switching and lower elevated temperature gate charge than other MOSFETs with comparable RDS(ON) specifications.

• High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low RDS(ON)

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency. • 175°C maximum junction temperature rating

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

TO-220 TO-263AB

FDP Series FDB Series

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ± 20 ID Drain Current – Continuous (Note 1)

– Pulsed (Note 1)

PD Total Power Dissipation @ TC = 25°C

Derate above 25°C 0.45 W/°C

TJ, TSTG Operating and Storage Junction Temperature Range –65 to +175 °C

Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670AL FDB6670AL 13’’ 24mm 800 units FDP6670AL FDP6670AL Tube n/a

2003 Fairchild Semiconductor Corporation FDP6670AL/FDB6670AL Rev D(W)