Fairchild FDD8882 FDU8882 User Guide
Summary
This document is a datasheet for the FDD8882/FDU8882 N-Channel PowerTrench MOSFET, a 30V, 55A power transistor with 11.5mΩ on-resistance. The manual details electrical characteristics, absolute maximum ratings, thermal properties, and package specifications for TO-252 and TO-251 packages. It is optimized for DC/DC converter applications with low gate charge and fast switching speed. Target users are electronics engineers working on power management circuits.
Page 1 Text Content
8882 / F 8882 N -C an el P er T ren ch
April 2008
FDD8882 / FDU8882
N-Channel Power Trench® MOSFET 30V, 55A, 11.5mΩ
Features General Description r DS(ON) = 11.5mΩ, VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using
r DS(ON) = 15mΩ, VGS = 4.5V, ID = 35A
either synchronous or conventional switching PWM High performance trench technology for extremely low controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
r DS(ON)
Low gate charge
High power and current handling capability
Ro HS Complicant
Application DC/DC converters
I-PAK (TO-251AA)
TO-252D-PAK
(TO-252)
2008 Fairchild Semiconductor Corporation www.fairchildsemi.com1
DD8882/FDU8882 Rev. C
Page Summary Contents For Fairchild FDD8882 FDU8882 User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 12 |
| File Size | 429.43 KB |
| Published | June 17, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the maximum drain current for the FDD8882?
The maximum continuous drain current is 55A at V_GS = 10V, but package current is limited to 35A.
How is the FDU8882 MOSFET typically packaged?
The FDU8882 is packaged in TO-251AA, available in tubes of 75 units.
What are the key applications for this MOSFET?
It is optimized for DC/DC converters using synchronous or conventional switching PWM controllers.
What is the typical gate threshold voltage?
The typical gate to source threshold voltage (V_GS(TH)) is between 1.2V and 2.5V.