Fairchild FDD8782 FDU8782 User's Manual

FD 8782/FD 8782 N -C hannel Pow er Tren ch SFET

November 2009

FDD8782/FDU8782 N-Channel Power Trench® MOSFET 25V, 35A, 11mΩ General Description Features

This N-Channel MOSFET has been designed specifically Max r DS(on) = 11.0mΩ at VGS = 10V, ID = 35A

to improve the overall efficiency of DC/DC converters using

Max r DS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A

either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

Low gate charge: Qg(10) = 18n C(Typ), VGS = 10V

r DS(on) and fast switching speed.

Low gate resistance

Application Avalanche rated and 100% tested Ro HS Compliant

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

I-PAK

Short Lead I-PAK

(TO-251AA)

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package Limited)

ID A -Continuous (Die Limited)

-Pulsed (Note 1) EAS Single Pulse Avalanche Energy (Note 2) m J PD Power Dissipation 50 TJ, TSTG Operating and Storage Temperature -55 to 175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8782 FDD8782 TO-252AA 13’’ 12mm 2500 units FDU8782 FDU8782 TO-251AA N/A(Tube) N/A 75 units FDU8782 FDU8782_F071 TO-251AA N/A(Tube) N/A 75 units

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD8782/FDU8782 Rev. A1