Fairchild FDD86250 User Guide
Summary
This N-Channel PowerTrench MOSFET delivers high performance in demanding power conversion applications, featuring low on-state resistance and superior switching characteristics suitable for efficient DC-DC circuitry. The detailed manual provides comprehensive technical data, including maximum ratings up to 150V and suitability for continuous operation at 50A. Ideal for electrical engineers and circuit designers building advanced power electronics that require optimal efficiency, reliability, and minimized energy loss in variable voltage systems.
Page 1 Text Content
FD 86250 N -C hannel Pow er Trench SFET
December 2010
FDD86250 N-Channel Power Trench® MOSFET 150 V, 50 A, 22 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild
Max r DS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
Semiconductor‘s advanced Power Trench® process that has
Max r DS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
100% UIL tested
Ro HS Compliant Application
DC - DC Conversion
TO -252D-PAK (TO-252)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage
VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 50 -Continuous (Silicon limited) TC = 25 °C
-Continuous TA = 25 °C (Note 1a) -Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C
Power Dissipation TA = 25 °C (Note 1a) 3.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 0.94
RθJA Thermal Resistance, Junction to Ambient (Note 1a)
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86250 FDD86250 D-PAK(TO-252) 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD86250 Rev.C
Page Summary Contents For Fairchild FDD86250 User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 6 |
| File Size | 374.07 KB |
| Published | July 07, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the MOSFET’s low on-state resistance?
The static drain to source on-resistance (Rds(on)) is 31 mΩ at V=6V, I=6.5A.
What are the maximum operating temperatures for this MOSFET?
The junction and storage temperature range spans from -55 to +150 °C.
How should I ensure I calculate power dissipation correctly?
Power Dissipation (Pd) requires factoring in the thermal resistance: ΔT / (θJC + θCA).
Where can I guarantee I am buying genuine components?
Always purchase parts directly from Fairchild or an Authorized Fairchild Distributor.