Fairchild FDD86102LZ User Guide
Summary
This datasheet covers the Fairchild FDD86102LZ N-Channel PowerTrench MOSFET, a high-performance component ideal for DC-DC converters and inverters. Designed for efficiency, it offers low on-state resistance and fast switching speeds, making it suitable for synchronous rectification applications.
Page 1 Text Content
FD 86102LZ N -C hannel Pow er Trench SFET
October 2010
FDD86102LZ N-Channel Power Trench® MOSFET 100 V, 35 A, 22.5 mΩ Features General Description
Max r DS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has
Max r DS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD
HBM ESD protection level > 6 k V typical (Note 4)
voltage level.
Very low Qg and Qgd compared to competing trench technologies Applications Fast switching speed
DC - DC Conversion
100% UIL tested
Inverter
Ro HS Compliant
Synchronous Rectifier
TO-252D-PAK (TO-252)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage
VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 42 -Continuous (Silicon limited) TC = 25 °C
-Continuous TA = 25 °C (Note 1a) -Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C 54
Power Dissipation TA = 25 °C (Note 1a) 3.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 2.3
RθJA Thermal Resistance, Junction to Ambient (Note 1a)
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86102LZ FDD86102LZ D-PAK(TO-252) 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD86102LZ Rev.C
Page Summary Contents For Fairchild FDD86102LZ User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 6 |
| File Size | 365.92 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
What is the maximum drain-source voltage?
100 V.
What is the on-resistance (rDS(on)) at Vgs = 10 V and Id = 8 A?
22.5 mΩ max.
What is the typical HBM ESD protection level?
> 6 kV typical.
What is the junction-to-case thermal resistance?
2.3 °C/W.
What are the typical applications of this MOSFET?
DC-DC conversion, inverter, and synchronous rectifier.