Fairchild FDD850N10L User Guide
Summary
The FDD850N10L is a high-performance N-Channel PowerTrench MOSFET ideal for demanding power electronics applications like DC-DC Converters and Synchronous Rectification. Designed with advanced technology, it offers superior switching performance, low on-state resistance, and fast operational response (AVCCAT). This manual serves as a comprehensive technical resource, detailing all maximum ratings, electrical characteristics, thermal profiles, and performance curves needed for engineers to successfully design and implement high-efficiency power circuits.
Page 1 Text Content
FD 850N 10L N -C hannel Pow er Trench SFET
December 2010
FDD850N10L N-Channel Power Trench® MOSFET 100V, 15.7A, 75mΩ Features Description RDS(on) = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advance Power Trench process that has been especially
RDS(on) = 64mΩ ( Typ.) @ VGS = 5V, ID = 12A
tailored to minimize the on-state resistance and yet maintain Low Gate Charge ( Typ. 22.2n C) superior switching performance.
Low Crss ( Typ. 42p F)
Fast Switching
Application
100% Avalanche Tested
DC to DC Converters / Synchronous Rectification
Improve dv/dt Capability
Ro HS Compliant
D-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter Rating Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±20
- Continuous (TC = 25o C) 15.7
ID Drain Current
- Continuous (TC = 100o C) 11.1
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.33 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Min. Max. Units
RθJC Thermal Resistance, Junction to Case - 3.0
RθJA Thermal Resistance, Junction to Ambient -
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD850N10L Rev. A5
Page Summary Contents For Fairchild FDD850N10L User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 319.89 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is the drain to source voltage rating of the FDD850N10L?
The maximum drain to source voltage rating is 100V.
What package does the FDD850N10L MOSFET use?
It is packaged in a D-PAK package.
Is the FDD850N10L RoHS compliant?
Yes, the FDD850N10L MOSFET is RoHS compliant.
What is the typical on-resistance at Vgs=10V, Id=12A?
The typical static drain to source on-resistance is 61mΩ.