Fairchild FDD8453LZ User Guide

FD 8453LZ N -C hannel Pow er Trench SFET

September 2007

FDD8453LZ

N-Channel Power Trench® MOSFET 40V, 50A, 6.7mΩ Features General Description Max r DS(on) = 6.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench® process that has

Max r DS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A

been especially tailored to minimize the on-state resistance and HBM ESD protection level >7k V typical (Note 4) switching loss. G-S zener has been added to enhance ESD voltage level.

Ro HS Compliant

Applications Inverter Synchronous Rectifier

TO -252D-PAK (TO-252)

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25°C 50 -Continuous (Silicon limited) TC = 25°C

-Continuous TA = 25°C (Note 1a) 16.4

-Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25°C

Power Dissipation TA = 25°C (Note 1a) 3.1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 1.9

RθJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8453LZ FDD8453LZ D-PAK (TO-252) 13’’ 12mm 2500 units

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