Fairchild FDD7N60NZ NZ FDU7N60NZ NZ User's Manual
Summary
These high-performance N-Channel MOSFETs are engineered for robust power conversion, utilizing advanced planar DMOS technology to ensure superior switching efficiency and low on-state resistance. Designed for applications like high-efficiency SMPS and active power factor correction, they offer fast switching speeds and built-in avalanche capability. This manual provides comprehensive technical specifications, covering maximum electrical ratings, thermal characteristics, detailed switching parameters, and performance data, enabling precise circuit design.
Page 1 Text Content
7N 60N / F 7N 60N -C an el M
December 2010
Uni FET-II
FDD7N60NZ / FDU7N60NZ N-Channel MOSFET 600V, 5.5A, 1.25 Features Description RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect tran-
sistors are produced using Fairchild’s proprietary, planar stripe,
Low Gate Charge ( Typ. 13n C)
DMOS technology.
Low Crss ( Typ. 7p F)
This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor-
Fast Switching
mance, and withstand high energy pulse in the avalanche and
100% Avalanche Tested commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
Improved dv/dt Capability
correction.
ESD Improved Capability
Ro HS Compliant
D-PAK I-PAKG
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FDD7N60NZ/FDU7N60NZ Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±25
-Continuous (TC = 25o C) 5.5
ID Drain Current
-Continuous (TC = 100o C) 3.3
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 5.5 EAR Repetitive Avalanche Energy (Note 1) 12.5 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.7 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter FDD7N60NZ/FDU7N60NZ Units
RJC Thermal Resistance, Junction to Case 1.4
RJA Thermal Resistance, Junction to Ambient 90
©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD7N60NZ / FDU7N60NZ Rev. A
Page Summary Contents For Fairchild FDD7N60NZ NZ FDU7N60NZ NZ User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 257.62 KB |
| Published | July 07, 2026 |
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