Fairchild FDD6N25 FDU6N25 User's Manual
Summary
This powerful N-Channel MOSFET is engineered with advanced DMOS planar stripe technology for superior electrical performance. It is rated at 250V and features optimized characteristics like low gate charge and minimal on-state resistance, ensuring fast switching capability up to 4.4A. The accompanying manual provides exhaustive technical specifications, covering absolute maximum ratings, thermal profiles, and detailed electrical parameters (including switching times) required for integration into high-efficiency applications, such as switched mode power supplies and Active Power Factor Correction circuits.
Page 1 Text Content
FD 6N 25 / FD 6N 25 250V N -C hannel M SFET
February 2007
Uni FETTM
FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
Low gate charge ( typical 4.5 n C)
stripe, DMOS technology.
Low Crss ( typical 5 p F)
Fast switching This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
100% avalanche tested
performance, and withstand high energy pulse in the avalanche
Improved dv/dt capability
and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D-PAK I-PAK
FDD Series SDG FDU Series
Absolute Maximum Ratings Symbol Parameter FDD6N25 / FDU6N25 Unit VDSS Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C) 4.4
- Continuous (TC = 100°C) 2.6
IDM Drain Current - Pulsed (Note 1)
VGSS Gate-Source voltage ±30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1) 4.4
EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.4 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDD6N25 / FDU6N25 Rev. A
Page Summary Contents For Fairchild FDD6N25 FDU6N25 User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 713.40 KB |
| Published | July 10, 2026 |
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