Fairchild FDD6770A Product Specifications
Summary
This high-performance N-Channel Power MOSFET is engineered for maximum efficiency in DC/DC converters and linear power regulation. Optimized with ultra-low on-resistance ($R_{DS(on)}$) and fast switching capabilities, it ensures optimal performance in demanding environments. This manual provides detailed technical specifications, including full electrical characteristics, thermal analysis, and mechanical ratings. It is an essential resource for hardware engineers designing Vcore DC/DC or VRM solutions for servers, desktop computers, and intermediate bus architectures.
Page 1 Text Content
FD 6770A -C hannel Pow er Trench SFET
January 2009
FDD6770A N-Channel Power Trench® MOSFET 25 V, 4.0 mΩ Features General Description
Max r DS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
Max r DS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A
synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast
100% UIL tested
switching speed.
Ro HS Compliant
Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
TO-252D-PAK (TO-252)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units
VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 50 -Continuous (Silicon limited) TC = 25 °C
-Continuous TA = 25 °C (Note 1a) -Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C
Power Dissipation TA = 25 °C (Note 1a) 3.7
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 3.0
RθJA Thermal Resistance, Junction to Ambient (Note 1a)
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6770A FDD6770A D-PAK (TO-252) 13 ’’ 12 mm 2500 units
©20 09 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD D6770A Rev.C
Page Summary Contents For Fairchild FDD6770A Product Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 6 |
| File Size | 310.47 KB |
| Published | July 15, 2026 |
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Frequently Asked Questions
What is the maximum specified drain-source on resistance?
The rated rDS(on) is a low of 8.0 mΩ at V = 4.5 V and I = 18.4 A.
What temperature range can this MOSFET operate within?
The operating junction temperature range for the component is -55 to +175 °C.
Which types of DC/DC converters are optimized for this component's use?
It is designed for efficiency in both synchronous and conventional switching PWM controllers.