Fairchild FDC604P Product Specifications

FD 604P

January 2001

FDC604P P-Channel 1.8V Specified Power Trench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses

• –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V

Fairchild’s low voltage Power Trench process. It has

RDS(ON) = 43 mΩ @ VGS = –2.5 V

been optimized for battery power management

applications. RDS(ON) = 60 mΩ @ VGS = –1.8 V

Applications • Fast switching speed.

• High performance trench technology for extremely

• Battery management

low RDS(ON)

• Load switch • Battery protection

Super SOT -6TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 VGSS Gate-Source Voltage ±8 ID Drain Current – Continuous (Note 1a) –5.5

– Pulsed –20

Maximum Power Dissipation (Note 1a) 1.6 WPD

(Note 1b) 0.8

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .604 FDC604P 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDC604P Rev C (W)