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Fairchild FDD390N15A User's Manual

Summary

The FDD390N15A is a high-efficiency N-Channel PowerTrench MOSFET engineered for robust power switching at 150V/26A. This comprehensive datasheet provides detailed measurements, including maximum ratings, thermal characteristics, dynamic parameters, and precise electrical specifications crucial for design validation. It is the ideal component for building highly efficient equipment such as DC to DC converters, server and telecom PSUs requiring synchronous rectification, battery chargers, and advanced AC motor drives.

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-C l P r T re

October 2011

FDD390N15A N-Channel Power Trench® MOSFET 150V, 26A, 40mΩ Features Description RDS(on) = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advance Power Trench process that has been

Fast Switching Speed

especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Low Gate Charge

High Performance Trench Technology for Extremely Low RDS(on)

Application

High Power and Current Handling Capability

DC to DC Converters

Ro HS Compliant

Synchronous Rectification for Server/Telecom PSU

Battery Charger

AC Motor Drives and Uninterruptible Power Supplies

Off-line UPS

D-PAK

o C unless otherwise noted

MOSFET Maximum Ratings TC = 25 Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±20

o C,Silicon Limited)

-Continuous (TC = 25

ID Drain Current

o C,Silicon Limited)

-Continuous (TC = 100

IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

(TC = 25

PD Power Dissipation

- Derate above 25o C 0.5 W/o C

TJ, TSTG Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose, o C

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 2.0

RθJA Thermal Resistance, Junction to Ambient 87

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD390N15A Rev. C1

Page Summary Contents For Fairchild FDD390N15A User's Manual

Page 1 -C l P r T re October 2011 FDD390N15A N-Channel Power Trench® MOSFET 150V, 26A, 40mΩ Features Description RDS(on) = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchil...
Page 2 -C l P r T re Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD390N15A FDD390N15A D-PAK 380mm 16mm Electrical Characteristics TC = 25o C unless o...
Page 3 -C l P r T re Typical Performance Characteristics (O [m ra in rr t[ ra in -S rc -R is ta Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 15.0V *Notes: 10.0V 1. VDS = 10V 8...
Page 4 -C l P r T re [N rm li Typical Performance Characteristics (Continued) [µ ra in rr [A ra in -S rc re lt Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temp...
Page 5 -C l P r T re Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve 0.1 0.02 0.01 *Notes: Single pulse 1. ZθJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM -...
Page 6 -C l P r T re Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD390N15A Rev. C1 www.fairchildsemi.c...
Page 7 -C l P r T re Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver RG Same Type as DUT VDD dv/dt controlled by RG ISD controlled by pulse period Gate Pulse Width VGS D = Gate Pulse Period 10V...
Page 8 -C l P r T re Mechanical Dimensions D-PAK Dimensions in Millimeters FDD390N15A Rev. C1 www.fairchildsemi.com8
Page 9 -C l P r T re TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an ...

Manual Details

Brand Fairchild
Pages 9
File Size 619.45 KB
Published July 12, 2026
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Frequently Asked Questions

What major applications is this MOSFET designed for?

It is suitable for DC to DC Converters, Synchronous Rectification in PSUs, AC Motor Drives, and Uninterruptible Power Supplies.

How efficient is the device at operating?

The typical static drain to source on-resistance (Rds(on)) is 33.5 mΩ at 10V and 26A.

What are the maximum temperature limits for use?

The specified operating and storage temperature range for this MOSFET is -55°C to +150°C.

How do I calculate power dissipation on a circuit board?

Power dissipation must be derated above 25°C, typically starting at a rate of 0.5 W/°C.