Fairchild FDD3860 User's Guide
Summary
A datasheet for the FDD3860 N-Channel PowerTrench MOSFET from Fairchild Semiconductor. The device features 100V drain-source voltage rating, 29A continuous drain current, and ultra-low on-resistance of 36mΩ at 10V gate drive. Built with advanced trench technology for low RDS(on) and low gate charge, it offers avalanche ruggedness and RoHS compliance in D-PAK (TO-252) package. The manual covers maximum ratings, thermal characteristics, electrical parameters, and typical performance curves. Intended for power electronics engineers designing DC-AC conversion, synchronous rectification, and switching power applications.
Page 1 Text Content
FD 3860 N -C hannel Pow er Trench SFET
October 2008
FDD3860
N-Channel Power Trench® MOSFET 100V, 29A, 36mΩ Features General Description Max r DS(on) = 36mΩ at VGS = 10V, ID = 5.9A This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
High performance trench technology for extremely low r DS(on)
tailored for low r DS(on) and low Qg figure of merit, with avalanche 100% UIL tested ruggedness for a wide range of switching applications.
Ro HS Compliant Applications
DC-AC Conversion
Synchronous Rectifier
TO -252D-PAK (TO-252)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units
VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Silicon limited) TC = 25°C
ID 6.2 A -Continuous TA = 25°C (Note 1a)
-Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25°C
Power Dissipation TA = 25°C (Note 1a) 3.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 1.8
RθJA Thermal Resistance, Junction to Ambient (Note 1a)
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3860 FDD3860 D-PAK (TO-252) 13’’ 12mm 2500 units
©20 08 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD D3860 Rev.C1
Page Summary Contents For Fairchild FDD3860 User's Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 6 |
| File Size | 330.19 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current for the FDD3860 at 25°C?
The maximum continuous drain current at T_C = 25°C is 29A.
What is the typical gate-to-source threshold voltage?
The typical gate-to-source threshold voltage (V_GS(th)) is 3.8V, with a range from 2.5V to 4.5V.
What package does the FDD3860 MOSFET use?
The FDD3860 uses a D-PAK (TO-252) package.
What is the purpose of this MOSFET according to its applications?
It is tailored for applications such as DC-AC conversion and synchronous rectification.