Fairchild FDC658P User's Manual

February 1999

FDC658P Single P-Channel, Logic Level, Power Trench TM MOSFET

General Description Features

This P-Channel Logic Level MOSFET is produced

-4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V

using Fairchild Semiconductor's advanced

RDS(ON) = 0.075 Ω @ VGS = -4.5 V.

Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain

Low gate charge (8n C typical).

low gate charge for superior switching performance.

High performance trench technology for extremely low

These devices are well suited for notebook computer

RDS(ON).

applications: load switching and power management, battery charging circuits, and DC/DC conversion. Super SOTTM-6 package: small footprint (72% smaller than

standard SO-8); low profile (1mm thick).

Super SOTTM-8 SO-8 SOT-223Super SOTTM-6 SOIC-16SOT-23

Super SOT -6TM

Absolute Maximum Ratings TA = 25°C unless otherwise note Symbol Parameter Ratings Units

VDSS Drain-Source Voltage -30

VGSS Gate-Source Voltage - Continuous ±20

ID Drain Current - Continuous (Note 1a) -4

- Pulsed -20

PD Maximum Power Dissipation (Note 1a) 1.6

(Note 1b)

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

© 1999 Fairchild Semiconductor Corporation FDC658P Rev.C