Fairchild FDC655BN User Guide

FD 655B Single N -C hannel, Logic Level, Pow er Trench SFET

January 2010

FDC655BN

Single N-Channel, Logic Level, Power Trench® MOSFET 30 V, 6.3 A, 25 mΩ Features General Description Max r DS(on) = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor’s advanced Power Trench® process

Max r DS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A

that has been especially tailored to minimize the on-state

Fast switching resistance and yet maintain superior switching performance.

Low gate charge These devices are well suited for low voltage and battery

powered applicatoins where low in-line power loss and fast

High performance trchnology for extremely low r DS(on)

switching are required.

Termination is Lead-free and Ro HS Compliant

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage

VGS Gate to Source Voltage ±20 -Continuous TA = 25°C (Note 1a) 6.3

-Pulsed Power Dissipation ( Note 1a) 1.6

Power Dissipation (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction to Ambient (Note 1a) °C/W

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity

.55B FDC655BN SSOT-6TM 7 ’’ 8 mm 3000 units

©20 10 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD C655BN Rev.C2