Fairchild FDC637AN User Guide
Summary
This highly efficient N-Channel 2.5V MOSFET is engineered using advanced PowerTrench technology, featuring extremely low on-state resistance and exceptional switching speeds within a small SuperSOT-6 footprint. Ideal for power electronics designers building compact, high-performance circuits such as DC/DC converters and load switches. This technical manual provides comprehensive specifications, including detailed electrical characteristics, thermal profiles, gate parameters, and absolute maximum ratings, ensuring reliable component selection for critical energy management applications.
Page 1 Text Content
November 1999
FDC637AN Single N-Channel, 2.5V Specified Power Trench TM MOSFET General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced DS(on) GS
Power Trench process that has been especially tailored = 0.032 Ω @ V = 2.5 V
DS(on) GS
to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Fast switching speed.
These devices have been designed to offer exceptional Low gate charge (10.5n C typical). power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages. • High performance trench technology for extremely low RDS(ON).
Applications
Super SOTTM-6 package: small footprint (72% smaller DC/DC converter than standard SO-8); low profile (1mm thick).
Load switch Battery Protection
Super SOT -6TM
Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter FDC637AN Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±8 ID Drain Current - Continuous (Note 1a) 6.2
Drain Current - Pulsed
PD Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 0.8
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W
Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity
.637 FDC637AN 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation FDC637AN, Rev. C
Page Summary Contents For Fairchild FDC637AN User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 66.90 KB |
| Published | June 16, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the maximum continuous drain current for the FDC637AN?
6.2A
What is the typical total gate charge?
10.5nC typical.
What is the operating junction temperature range?
-55 to +150°C
What applications are suitable for this MOSFET?
DC/DC converters, load switches, battery protection.
How compact is the SuperSOT-6 package?
72% smaller than standard SO-8 with a low profile.