Fairchild FDC6333C User Guide

FD 6333C

October 2001

FDC6333C 30V N & P-Channel Power Trench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using

• Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V

Fairchild Semiconductor’s advanced Power Trench

RDS(ON) = 150 mΩ @ VGS = 4.5 V

process that has been especially tailored to minimize on-state resistance and yet maintain superior

switching performance. • Q2 –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V

RDS(ON) = 220 mΩ @ VGS = –4.5 V

These devices have been designed to offer exceptional power dissipation in a very small footprint

• Low gate charge

for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

• High performance trench technology for extremely low RDS(ON).

Applications

• DC/DC converter • Super SOT –6 package: small footprint (72% smaller than • Load switch SO-8); low profile (1mm thick).

• LCD display inverter

Super SOT -6TM

Pin 1

Super SOT™-6

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage –30 VGSS Gate-Source Voltage ±16 ±25 ID Drain Current – Continuous (Note 1a) 2.5 –2.0

– Pulsed –8

PD Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b) 0.9 (Note 1c) 0.7

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

.333 FDC6333C 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDC6333C Rev C (W)