# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Fairchild FDC6318P User's Manual

Summary

This document details the FDC6318P Dual P-Channel MOSFET, utilizing advanced PowerTrench technology to deliver low on-state resistance and high performance in a compact SuperSOT-6 package. It provides comprehensive electrical characteristics, maximum ratings, and application guidelines suitable for power management and load switch circuits.

📄 Preview PAGE OF 5

Page 1 Text Content

FD 6318P December 2001

FDC6318P Dual P-Channel 1.8V Power Trench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are

• –2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5 V

produced using Fairchild Semiconductor's advanced

RDS(ON) = 125 mΩ @ VGS = –2.5 V

Power Trench process that has been especially tailored

to minimize on-state resistance and yet maintain low RDS(ON) = 200 mΩ @ VGS = –1.8 V

gate charge for superior switching performance.

• High performance trench technology for extremely

Applications low RDS(ON)

• Power management

• Super SOTTM-6 package: small footprint (72%

• Load switch

smaller than standard SO-8); low profile (1mm thick)

Super SOT -6TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –2.5 A – Pulsed –7

PD Power Dissipation for Single Operation (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) 0.7

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .318 FDC6318P 13’’ 12mm 3000 units

2001 Fairchild Semiconductor Corporation FDC6318P Rev D (W)

Page Summary Contents For Fairchild FDC6318P User's Manual

Page 1 FD 6318P December 2001 FDC6318P Dual P-Channel 1.8V Power Trench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are • –2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5...
Page 2 FD 6318P Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA...
Page 3 FD 6318P S( LI ZE Typical Characteristics IN -S -R ES IS TA -I , D RA IN UR RE NT (A -I , D IN EN (A VGS=-4.5V VGS = -1.8V -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region ...
Page 4 FD 6318P -I , D IN EN (A Typical Characteristics r( t), LI ZE FF EC TI VE -V S, TE -S VO LT (V TR SI EN TH ER ES IS TA VDS = -4V ID = -2.5A f = 1 MHz VGS = 0 V Qg, GATE CHARGE (n C) -VDS, DRAIN TO SOU...
Page 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...

Manual Details

Brand Fairchild
Pages 5
File Size 165.22 KB
Published June 15, 2026
1 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the maximum drain-source voltage of the FDC6318P?

–12 V.

What is the on-resistance at Vgs = -1.8 V?

200 mΩ maximum at Id = –1.6 A.

What package type does the FDC6318P use?

SuperSOT-6, which is 72% smaller than standard SO-8 and only 1 mm thick.

What is the operating temperature range?

–55°C to +150°C junction temperature.

Can the FDC6318P be used in life support systems?

No, Fairchild's products are not authorized for use as critical components in life support devices.