Fairchild FDC6305N User Guide
Summary
This datasheet from Fairchild Semiconductor covers the FDC6305N dual N-channel PowerTrench MOSFET specified for 2.5 V gate drive operation, housed in the SuperSOT-6 package with a footprint 72 percent smaller than standard SO-8 and a 1 mm low profile. Key specifications include a 20 V drain-source breakdown voltage, 2.7 A continuous drain current, on-state resistance of 0.08 ohms at 4.5 V gate drive decreasing to 0.12 ohms at 2.5 V, and a typical gate charge of 3.5 nC for fast switching performa
Page 1 Text Content
March 1999
FDC6305N Dual N-Channel 2.5V Specified Power Trench TM MOSFET
General Description Features These N-Channel low threshold 2.5V specified 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V
MOSFETs are produced using Fairchild Semiconductor's
RDS(ON) = 0.12 Ω @ VGS = 2.5 V
advanced Power Trench process that has been especially tailored to minimize on-state resistance and
Low gate charge (3.5n C typical).
yet maintain low gate charge for superior switching performance.
Fast switching speed.
Applications
• High performance trench technology for extremely
Load switch
low R DS(ON)
DC/DC converter Motor driving Super SOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Super SOT -6TM
Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±8 ID Drain Current - Continuous (Note 1a) 2.7
- Pulsed
PD Power Dissipation for Single Operation (Note 1a) 0.96 (Note 1b)
(Note 1c)
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W
Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity
.305 FDC6305N 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation FDC6305N, Rev. C
Page Summary Contents For Fairchild FDC6305N User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 73.70 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What primary benefits make this MOSFET highly efficient?
It uses an advanced PowerTrench process to ensure superior switching performance by minimizing on-state resistance and maintaining low gate charge.
How must I account for heat dissipation when designing a circuit?
The thermal resistance (Rth) depends heavily on the user's board design; it is crucial to use appropriate mounting pads and calculate total power dissipation relative to junction temperature limits.
Can this component be used in life support medical devices?
No. The manufacturer states that these products are not authorized for use as critical components in life support systems without explicit written approval.