Fairchild FDC606P User Guide
Summary
This high-performance P-Channel PowerTrench MOSFET is engineered for optimized power efficiency and fast switching in demanding electronic systems. Ideal for specialized applications such as battery management, load switching, and circuit protection where low on-resistance ($R_{DS(ON)}$) is critical. The accompanying manual provides comprehensive technical specifications, covering absolute maximum ratings, detailed electrical characteristics, thermal performance curves (temperature and current variation), ensuring reliability for advanced power design projects.
Page 1 Text Content
FD 606P December 2001
FDC606P P-Channel 1.8V Specified Power Trench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses
• –6 A, –12 V. RDS(ON) = 26 mΩ @ VGS = –4.5 V
Fairchild’s low voltage Power Trench process. It has
RDS(ON) = 35 mΩ @ VGS = –2.5 V
been optimized for battery power management
applications. RDS(ON) = 53 mΩ @ VGS = –1.8 V
Applications • Fast switching speed
• High performance trench technology for extremely
• Battery management
low RDS(ON)
• Load switch • Battery protection
Super SOT -6TM
Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –6 A – Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .606 FDC606P 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation FDC606P Rev E (W)
Page Summary Contents For Fairchild FDC606P User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 154.53 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What are the electrical characteristics of this MOSFET?
It features a Gate Threshold Voltage (GS(th)) between –0.4V and –0.5V, and a Drain-Source Breakdown Voltage (BVDS) of -12V.
How is the device rated regarding thermal performance?
The Thermal Resistance, Junction-to-Ambient ($ heta_{JA}$) is 78 °C/W when mounted on a 1in pad of 2oz copper on FR-4 board.
What application areas are recommended for this product?
It is optimized for battery power management applications, including load switch and general battery protection circuits.
What is the absolute maximum drain current rating?
The continuous Drain Current ($I_D$) is specified up to –6 A.