Fairchild FDC2612 User's Manual
Summary
This N-Channel Power Trench MOSFET (FDC2612) is an advanced component engineered for improving the efficiency of DC/DC converters and high-speed switching PWM controllers. Optimized for power management systems, it provides low on-resistance ($R_{DS(ON)}$) and minimal gate charge, handling up to 200V drain-source voltage and 1.1A continuous current. This comprehensive technical manual covers all essential engineering data, including absolute limits, detailed electrical characteristics, switching timings, and thermal performance data necessary for power electronics designers building robust and highly efficient converter circuits.
Page 1 Text Content
FD February 2002
FDC2612 200V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed
• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
• High performance trench technology for extremely
switching PWM controllers. It has been optimized for
low RDS(ON)
low gate charge, low RDS(ON) and fast switching speed.
• High power and current handling capability
Applications
• Fast switching speed
• DC/DC converter
• Low gate charge (8n C typical)
Super SOT -6TM
Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 1.1 A – Pulsed 4
Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .262 FDC2612 7’’ 8mm 3000 units
2002 Fairchild Semiconductor Corporation FDC2612 Rev B3 (W)
Page Summary Contents For Fairchild FDC2612 User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 201.74 KB |
| Published | June 22, 2026 |
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Frequently Asked Questions
What types of electronics are ideal for using this MOSFET?
It is designed for DC/DC converters, particularly those employing synchronous or conventional PWM controllers.
How can I estimate the power dissipation (P)?
The maximum effective power dissipation allowed is 1.6 W for pulse testing and 0.8 W typically.
What is the temperature range for operation?
The acceptable operating junction temperature range (T, J) is -55 to +150 °C.
What are the on-resistance characteristics?
The typical R_DS(on) at 25°C using standard test conditions is 725 mΩ.