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Fairchild FDC2512 User Guide

Summary

The FDC2512 is a high-performance N-Channel Power Trench MOSFET engineered for superior efficiency in DC/DC converters. Optimized through advanced trench technology, this component features extremely low on-resistance and fast switching speed, making it ideal for demanding power management applications. This manual provides comprehensive data, including electrical characteristics, thermal specifications, and dynamic timing parameters necessary for engineers designing reliable and high-efficiency power conversion circuitry.

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Page 1 Text Content

October 2009

FDC2512 150V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 1.4 A, 150 V. RDS(ON) = 425 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 475 mΩ @ VGS = 6 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

• High performance trench technology for extremely

low gate charge, low RDS(ON) and fast switching speed.

low RDS(ON)

Applications

• Low gate charge (8n C typ)

• DC/DC converter

• High power and current handling capability

• Fast switching speed

Super SOT -6TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 1.4 – Pulsed 8 EAS Single Pulse Avalanche Energy 13.5 m J (Note 3)

Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8

TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .252 FDC2512 7’’ 8mm 3000 units

2009 Fairchild Semiconductor Corporation FDC2512 Rev B4 (W)

Page Summary Contents For Fairchild FDC2512 User Guide

Page 1 October 2009 FDC2512 150V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed • 1.4 A, 150 V. RDS(ON) = 425 mΩ @ VGS = 10 V specifically to improve the ...
Page 2 FD Electrical Characteristics TA = 25°C unless otherwise noted Symbl Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 150 V ∆...
Page 3 S( LI ZE Typical Characteristics IN -S -R ES IS TA , D IN EN (A , D IN EN (A VGS = 10V VGS = 4.0V ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-...
Page 4 , D IN EN (A Typical Characteristics r( t), LI ZE FF EC TI VE S, TE -S VO LT (V TR SI EN TH ER ES IS TA f = 1MHz ID = 1.4A VDS = 50V 75V VGS = 0 V Qg, GATE CHARGE (n C) VDS, DRAIN TO SOURCE VOLTAGE (V...
Page 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive lis...

Manual Details

Brand Fairchild
Pages 5
File Size 242.46 KB
Published June 20, 2026
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Frequently Asked Questions

What is the absolute maximum drain-source voltage ($V_{DSS}$)?

The Drain-Source Voltage has an absolute maximum rating of 150 V.

What specific types of converters is this MOSFET optimized for?

It is designed to improve efficiency in DC/DC converters using synchronous or conventional switching PWM controllers.

How much heat can it dissipate per watt (Junction-to-Ambient)?

The thermal resistance, junction-to-ambient ($ heta_{JA}$), is rated at 78 °C/W.

Where should I purchase this component to ensure it is genuine?

Buy parts directly from Fairchild or via an Authorized Fairchild Distributor listed by country on their website.