Fairchild FDB2552 FDP2552 User's Manual

February 2012

FDB2552 / FDP2552 N-Channel Power Trench® MOSFET 150V, 37A, 36mΩ Features Applications r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39n C (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse)

Formerly developmental type 82869

DRAIN GATE

SOURCE(FLANGE) DRAIN GATE

SOURCE DRAIN (FLANGE)TO-220AB STO-263AB

FDP SERIES FDB SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage

VGS Gate to Source Voltage ±20 Drain Current

AContinuous (TC = 25o C, VGS = 10V)

ID Continuous (TC = 100o C, VGS = 10V) 26

Continuous (Tamb = 25o C, VGS = 10V) with RθJA = 43o C/W Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) m J Power dissipation

Derate above 25o C 1.0 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-220, TO-263 1.0

RθJA Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)

RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

2012 Fairchild Semiconductor Corporation FDB2552 / FDP2552 Rev. C