Fairchild FDB029N06 User Guide
Summary
Discover the FDB029N06 N-Channel PowerTrench MOSFET, engineered for demanding high-power switching applications. This robust component features industry-leading low on-state resistance and fast switching capability, making it ideal for DC to DC Converters and synchronous rectification circuits. The comprehensive manual provides every detail required for professional designers, including maximum current ratings (up to 193A), thermal performance specifications, electrical characteristics, and operational data, ensuring reliable system integration in high-efficiency power electronics designs.
Page 1 Text Content
029N 06 N -C an el P er T ren ch
June 2009
FDB029N06 N-Channel Power Trench® MOSFET 60V, 193A, 3.1mΩ Features Description RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced Power Trench process that has been espe-
Fast Switching Speed
cially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Low Gate Charge
High Performance Trench Technology for Extremely Low
Application
RDS(on)
DC to DC Convertors / Synchronous Rectification
High Power and Current Handling Capability
Ro HS Compliant
D2-PAK FDB Series G
MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±20
-Continuous (TC = 25o C, Silicon Limited) 193*
ID Drain Current 136* A-Continuous (TC = 100o C, Silicon Limited)
-Continuous (TC = 25o C, Package Limited)
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 1.54 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.65
RθJA Thermal Resistance, Junction to Ambient 62.5
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDB029N06 Rev. A
Page Summary Contents For Fairchild FDB029N06 User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 505.76 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What are the maximum rated continuous drain current and voltage?
The maximum ratings are 60V Drain to Source Voltage and a continuous Drain Current of 193A at 25°C.
What is the typical on-state resistance of this MOSFET?
The typical Static Drain to Source On Resistance (RDS(on)) is 2.4 mΩ under test conditions.
What temperature range can the device operate within?
The operating and storage temperature range for the FDB029N06 is -55 to +175 C.
Is this MOSFET suitable for high-power efficiency applications?
Yes, it features low gate charge and superior switching performance, making it ideal for DC to DC Convertors / Synchronous Rectification.