FAIRCHILD FDA28N50F Product Specifications
Summary
Discover the FDA28N50F N-Channel MOSFET, a high-performance power transistor engineered with advanced planar DMOS technology. This robust component features extremely low on-state resistance ($\text{R}_{\text{DS(on)}}$) and superior switching capabilities, making it ideal for demanding circuits like high-efficiency switched mode power supplies or active power factor correction systems. The accompanying manual provides comprehensive technical data, including detailed maximum ratings, thermal characteristics, gate charge parameters, and dynamic electrical specifications, ensuring expert engineers can confidently integrate this reliable, avalanche-tested MOSFET into their designs.
Page 1 Text Content
FD 28N 50F N -C hannel M SFET
January 2012
Uni FET TM
FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features Description RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
Low Gate Charge ( Typ. 80n C)
stripe, DMOS technology.
Low Crss ( Typ. 38p F)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching
Fast Switching
performance, and withstand high energy pulse in the avalanche
100% Avalanche Tested and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
Improved dv/dt Capability
correction.
Ro HS Compliant
TO-3PN
MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C)
ID Drain Current
-Continuous (TC = 100o C)
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 2.5 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.4
o C/WRθCS
Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient 40
©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDA28N50F Rev.C0
Page Summary Contents For FAIRCHILD FDA28N50F Product Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 393.44 KB |
| Published | July 22, 2026 |
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