Fairchild FCP380N60 FCPF380N60 User's Manual
Summary
This high-performance SuperFET II N-Channel MOSFET is engineered for advanced, highly efficient power conversion in switching mode AC/DC and DC/AC applications. Featuring ultra-low on-resistance and superb thermal stability up to 150°C, it minimizes conduction loss while ensuring superior switching performance. This manual provides comprehensive technical specifications, including detailed electrical characteristics, maximum ratings, and thermal analysis data, making it an essential component guide for power electronics engineers designing next-generation compact systems.
Page 1 Text Content
FC P380N 60 / FC PF380N 60 N -C hannel SFET
March 2012
Super FET® II
FCP380N60 / FCPF380N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge bal-
Max. RDS(on) = 380mΩ
ance mechanism for outstanding low on-resistance and lower Ultra low gate charge (typ. Qg = 30n C) gate charge performance.
Low effective output capacitance (typ. Coss.eff = 95p F) This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with-
100% avalanche tested
stand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET®II is very suitable for various AC/DC power conversion in switching mode operation for system minia- turization and higher efficiency.
TO-220FG
G D S SDTO-220
Absolute Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter FCP380N60 FCPF380N60 Units
VDSS Drain to Source Voltage
-DC ±20
VGSS Gate to Source Voltage
-AC (f>1HZ) ±30 -Continuous (TC = 25o C) 10.2 10.2*
ID Drain Current
-Continuous (TC = 100o C) 6.4 6.4*
IDM Drain Current - Pulsed (Note 1) 30.6 30.6* EAS Single Pulsed Avalanche Energy (Note 2) 211.6 m J IAR Avalanche Current (Note 1) 2.3 EAR Repetitive Avalanche Energy (Note 1) 1.06 m J Peak Diode Recovery dv/dt (Note 3)
dv/dt V/ns
MOSFET dv/dt 100
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 0.85 0.25 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FCP380N60 FCPF380N60 Units RθJC Thermal Resistance, Junction to Case 1.18
o C/WRθCS
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5
©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FCP380N60 / FCPF380N60 Rev. C4
Page Summary Contents For Fairchild FCP380N60 FCPF380N60 User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 283.91 KB |
| Published | June 05, 2026 |
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