Fairchild FCD7N60 FCU7N60 User's Manual
Summary
High-efficiency 600V N-Channel MOSFET built with proprietary SuperFET technology. This component is ideal for advanced AC/DC power conversion and switching mode operation, ensuring superior performance, lower conduction losses, and system miniaturization. The manual provides comprehensive technical specifications vital for electronics designers, featuring detailed electrical characteristics (e.g., Rds(on), gate charge), thermal resistance curves, and operational guidelines necessary for designing reliable, high-power switching circuits.
Page 1 Text Content
FC 7N 60/FC 7N 60 600V N -C hannel M SFET
December 2008
Super FET
FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
Typ. Rds(on)=0.53Ω
balance mechanism for outstanding low on-resistance and
Ultra low gate charge (typ. Qg=23n C) lower gate charge performance.
This advanced technology has been tailored to minimize
Low effective output capacitance (typ. Coss.eff=60p F)
conduction loss, provide superior switching performance, and 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy. Ro HS Compliant Consequently, Super FET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D-PAK SD I-PAK FCD Series G
FCU Series
Absolute Maximum Ratings Symbol Parameter FCD7N60/FCU7N60 Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) 4.4
IDM Drain Current - Pulsed (Note 1)
VGSS Gate-Source voltage ± 30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1) 8.3 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.67 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter FCD7N60/FCU7N60 Unit RθJC Thermal Resistance, Junction-to-Case 1.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W
©20 08 Fairchild Semiconductor Corporation www.fairchildsemi.com FC D7N60/FCU7N60 Rev. A1
Page Summary Contents For Fairchild FCD7N60 FCU7N60 User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 1005.37 KB |
| Published | June 15, 2026 |
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