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Fairchild FCB20N60 User's Manual

Summary

This advanced N-Channel MOSFET, featuring proprietary SuperFET technology, is engineered for high-efficiency AC/DC power conversion in switching mode operations. Ideal for system miniaturization while maintaining superior performance due to its ultra-low gate charge and excellent on-resistance. The accompanying manual provides comprehensive technical specifications, detailed electrical characteristics, thermal guidelines, and maximum ratings required by power electronics engineers and circuit designers integrating reliable, high-performance solid-state switches into their applications.

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FC 20N 60 600V N -C hannel M SFET

December 2008

Super FET TM

FCB20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

Typ. RDS(on) = 0.15Ω

balance mechanism for outstanding low on-resistance and

Ultra low gate charge (typ. Qg = 75n C) lower gate charge performance.

Low effective output capacitance (typ. Coss.eff = 165p F) This advanced technology has been tailored to minimize con-

duction loss, provide superior switching performance, and with-

100% avalanche tested

stand extreme dv/dt rate and higher avalanche energy.

Ro HS Compliant Consequently, Super FET is very suitable for various AC/DC

power conversion in switching mode operation for system min- iaturization and higher efficiency.

Absolute Maximum Ratings Symbol Parameter FCB20N60 Unit VDSS Drain-Source Voltage

ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 12.5

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ± 30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1)

EAR Repetitive Avalanche Energy (Note 1) 20.8 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 1.67 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter FCB20N60 Unit RθJC Thermal Resistance, Junction-to-Case 0.6 °C/W

RθJA* Thermal Resistance, Junction-to-Ambient* °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount

©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FCB20N60 Rev. A3

Page Summary Contents For Fairchild FCB20N60 User's Manual

Page 1 FC 20N 60 600V N -C hannel M SFET December 2008 Super FET TM FCB20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150°C Super FETTM is, Fairchild’s proprietary, new generation of high voltag...
Page 2 FC 20N 60 600V N -C hannel M SFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCB20N60 FCB20N60 D2-PAK 330mm 24m Electrical Characteristics TC ...
Page 3 FC 20N 60 600V N -C hannel M SFET Typical Performance Characteristics ap ac ita nc [p F] , D ra in ur re nt [A ra in -S ou rc n- es is ta nc Figure 1. On-Region Characteristics Figure 2. Transfer Char...
Page 4 FC 20N 60 600V N -C hannel M SFET Typical Performance Characteristics (Continued) , D ra in ur re nt [A , ( or al iz ed SS ra in -S ou rc Br ea kd ow ol ta ge Figure 7. Breakdown Voltage Variation Fig...
Page 5 FC 20N 60 600V N -C hannel M SFET Gate Charge Test Circuit & Waveform Same Type as DUT Qgs Qgd Charge Resistive Switching Test Circuit & Waveforms VDS VDS 90% VGS RG 10% VGS td(on) tr td(off) ...
Page 6 FC 20N 60 600V N -C hannel M SFET Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver RG Same Type as DUT VDD dv/dt controlled by RG ISD controlled by pulse period Gate Pulse Width VGS D = G...
Page 7 FC 20N 60 600V N -C hannel M SFET Mechanical Dimensions D2-PAK Dimensions in Millimeters www.fairchildsemi.com FCB20N60 Rev. A3
Page 8 FC 20N 60 600V N -C hannel M SFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is no...