Fairchild FCA35N60 User's Manual
Summary
The FCA35N60 is a high-performance 600V N-Channel MOSFET featuring advanced SuperFET technology, engineered for superior switching and conduction losses. This datasheet provides comprehensive technical specifications, covering maximum ratings, electrical characteristics, and detailed performance data necessary for design integration. It is the essential guide for power electronics engineers designing miniature, highly efficient AC/DC power converter systems that require robust high-frequency switching capability.
Page 1 Text Content
FC 35N 60 N -C hannel M SFET
March 2009
Super FETTM
FCA35N60 600V N-Channel MOSFET
Features Description
650V @ TJ = 150°C Super FETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge bal-
Typ.RDS(on) = 0.079Ω
ance mechanism for outstanding low on-resistance and lower Ultra low gate charge ( Typ. Qg = 139n C ) gate charge performance.
Low effective output capacitance ( Typ. Coss.eff = 340p F ) This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
100% avalanche tested
withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
TO-3PN
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter Ratings Units
VDSS Drain to Source Voltage VGSS Gate-Soure voltage ±30
-Continuous (TC = 25o C)
ID Drain Current
-Continuous (TC = 100o C) 22.2
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 31.25 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
(TC = 25o C) 312.5
PD Power Dissipation
- Derate above 25o C 2.5 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC Thermal Resistance, Junction to Case - 0.4
o C/WRθCS
Thermal Resistance, Case-to-Heat Sink 0.24 RθJA Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FCA35N60 Rev. A
Page Summary Contents For Fairchild FCA35N60 User's Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 764.35 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What is the device's drain-to-source breakdown voltage rating?
The drain to source voltage (VDS) has a maximum rated value of 600 V.
What are the recommended continuous drain current ratings at two different temperatures?
At 25°C, it is stable at 35 A; however, at 100°C, it derates to 22.2 A.
How low is the typical static Drain-Source On Resistance?
The typical R_DS(on) is very low at 0.079 Ω, indicating excellent conduction performance.
What is the maximum allowable operational temperature range for this MOSFET?
The operating and storage temperature range spans from -55°C to +150°C J.