FAIRCHILD BUZ11 User Guide

BUZ11

Data Sheet June 1999 File Number 2253.2

30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET

[ /Title

This is an N-Channel enhancement mode silicon gate power = 0.040

DS(ON)

(BUZ1 field effect transistor designed for applications such as

SOA is Power Dissipation Limited

1) switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching Nanosecond Switching Speeds

/Sub-

transistors requiring high speed and low gate drive power.

ject Linear Transfer Characteristics

This type can be operated directly from integrated circuits.

High Input Impedance

50V, Formerly developmental type TA9771.

Majority Carrier Device

Ordering Information Related Literature

PART NUMBER PACKAGE BRAND TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

BUZ11 TO-220AB BUZ11

Chan-

NOTE: When ordering, use the entire part number.

nel Symbol

Power MOS- FET) /Autho r () /Key- words (Inter- sil Packaging Corpo-

JEDEC TO-220AB

ration,

SOURCE

N- DRAIN

Chan- nel DRAIN (FLANGE) Power MOS- FET, TO- 220AB

/Cre- ator () /DOCI NFO pdf- mark

©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A