Fairchild BSS138W User Guide

SS138W -C hannel Logic Level Enhancem ent M ode Field Effect Transistor

December 2010

BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features These N-Channel enhancement mode field effect RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A

transistor. These products have been designed to RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A minimize on-state resistance while provide rugged,

High density cell design for extremely low RDS(ON)

reliable, and fast switching performance.These prod-

Rugged and Reliable

ucts are particularly suited for low voltage, low current

applications such as small servo motor control, power Compact industry standard SOT-323 surface mount MOSFET gate drivers, and other switching applica- package

tions.

SOT-323 Marking : 138

Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 50 VGSS Gate-Source Voltage ±20 ID Drain Current - Continuous (Note1) 0.21

- Pulsed 0.84

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering °C

Purposes, 1/16” from Case for 10 Seconds

Thermal Characteristics Symbol Parameter Value Units PD Maximum Power Dissipation (Note1) m W

Derate Above 25°C 2.72 m W/°C

RθJA Thermal Resistance, Junction to Ambient (Note1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

BSS138W 7’’ 8mm 3000 units

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BSS138W Rev. A0