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Fairchild BC807 BC808 User's Manual

Summary

These PNP Epitaxial Silicon Transistors (BC807/BC808) are designed for reliable switching and amplification in low power output stages, making them ideal for AF-Driver circuits. This comprehensive manual provides electrical engineers and circuit designers with essential technical documentation. You will find detailed absolute maximum ratings, performance curves, junction temperature limits, and saturation voltage data necessary for integrating these components into sophisticated analog or power management systems.

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查询BC80716供应商

BC807/BC808

Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC817/BC818

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage

: BC807 -50 : BC808 -30

VCEO Collector-Emitter Voltage

: BC807 -45 : BC808 -25

VEBO Emitter-Base Voltage -5 IC Collector Current (DC) -800 m A PC Collector Power Dissipation -310 m W TJ Junction Temperature °C

TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10m A, IB=0

: BC807 -45 : BC808 -25

BVCES Collector-Emitter Breakdown Voltage IC= -0.1m A, VBE=0

: BC807 -50 : BC808 -30

BVEBO Emitter-Base Breakdown Voltage IE= -0.1m A, IC=0 -5 ICES Collector Cut-off Current VCE= -25V, VBE=0 -100 n A IEBO Emitter Cut-off Current VEB= -4V, IC=0 -100 n A h FE1 DC Current Gain VCE= -1V, IC= -100m A

h FE2 VCE= -1V, IC= -300m A

VCE (sat) Collector-Emitter Saturation Voltage IC= -500m A, IB= -50m A -0.7 VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300m A -1.2 f T Current Gain Bandwidth Product VCE= -5V, IC= -10m A MHz

f=50MHz

Cob Output Capacitance VCB= -10V, f=1MHz p F

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

Page Summary Contents For Fairchild BC807 BC808 User's Manual

Page 1 查询BC80716供应商 BC807/BC808 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC817/BC818 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial S...
Page 2 807/B h FE Classification Classification h FE1 100 ~ 250 160 ~ 400 250 ~ 630 h FE2 60- 100- 170- Marking Code Type 807-16 807-25 807-40 808-16 808-25 808-40 Marking 9FA 9FB 9FC 9GA 9GB 9GC ©2002 Fairc...
Page 3 807/B Typical Characteristics [m A] , C LL TO EN [m A] , C LL EC TO EN E, EN AI IB = - 80µA IB = - 70µA IB = - 4.5m AIB = - 5.0m A IB = - 60µA IB = - 4.0m A IB = - 3.5m A = - 50µA IB = - 3.0m A IB -30...
Page 4 807/B Typical Characteristics (Continued) T[ z] , G AI AN ID TH VCE = -5.0V IC[m A], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, Augus...
Page 5 807/B Package Dimensions SOT-23 0.38 REF .2 IN 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT...

Manual Details

Brand Fairchild
Pages 6
File Size 69.98 KB
Published June 06, 2026
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Frequently Asked Questions

What is the absolute maximum collector power dissipation?

The Collector Power Dissipation ($P_C$) has an absolute maximum rating of -310 mW C.

In which applications are BC807/BC808 recommended for use?

These transistors are suitable for AF-Driver stages and low power output stages.

What is the pinout sequence for the transistor?

The pins correspond to: 1. Base, 2. Emitter, and 3. Collector.

Can BC807/BC808 be used in life support systems?

No, Fairchild’s products require express written approval before use as critical components in life support devices or systems.