Vishay SFH618A 628A Data Sheet Manual

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SFH618A/628A

Phototransistor, 5.3 k V TRIOS

Low Current Input Optocoupler

FEATURES

Dimensions in Inches (mm)

Very High CTR at =1.0 m A, =0.5 V

– SFH618A-2, 63–125% SFH618A

pin one ID

– SFH618A-3, 100–200% Anode

Collector

– SFH618A-4, 160–320%

– SFH618A-5, 250–500% .255 (6.48) Cathode Emitter .268 (6.81)

– SFH628A-2, 63–200%

SFH628A

– SFH628A-3, 100–320%

Anode/

Cathode Collector

– SFH628A-4, 160–500% Specified Minimum CTR at =0.5 m A Cathode/

Emitter

Anode

– SFH618A, =1.5 V: 32% (typical 120%) .179 (4.55)

– SFH628A, =1.5 V: 50% (typical 160%)

.031 (.79) typ. .300 (7.62) typ.

Good CTR Linearity Depending on .030 (.76) .045 (1.14) .050 (1.27) typ.

Forward Current Low CTR Degradation

High Collector-emitter Voltage, =55 V .150 (3.81) .230 (5.84)

Isolation Test Voltage, 5300 V 10°

Low Coupling Capacitance typ.

Field-Effect Stable by TRIOS (TRansparent IOn .035 (.89)

Shield) .018 (.46)

End-Stackable, 0.100" (2.54 mm) Spacing

High Common-mode Interference Immunity (Unconnected Base) Underwriters Lab File #52744 Maximum Ratings VDE 0884 Available with Option 1 Emitter SMD Option — See SFH6186/6286 Data Sheet Reverse Voltage (SFH618A)............................................................. 6.0 V

DC Forward Current (SFH628A) ..................................................±50 m A

APPLICATIONS

Surge Forward Current (t 10 µs) (SFH628A) ...............................±2.5 A

Telecom

Total Power Dissipation 70 m W

Industrial Controls Detector Battery Powered Equipment Collector-emitter Voltage 55 V Office Machines Emitter-collector Voltage................................................................... 7.0 V

Collector Current 50 m A DESCRIPTION Collector Current (t 1.0 ms) 100 m A Total Power Dissipation 150 m W

The SFH618A/628A feature a high current transfer

Package

ratio, low coupling capacitance and high isolation

Isolation Test Voltage between Emitter and

voltage. These couplers have a Ga As infrared emit-

Detector, refer to Climate DIN 40046,

ting diode emitter, which is optically coupled to a sili-

part 2, Nov. 74 5300 V

con planar phototransistor detector, and is

Creepage Distance 7.0 mm

incorporated in a plastic DIP-4 package.

Clearance 7.0 mm

The coupling devices are designed for signal trans- Insulation Thickness between Emitter and Detector 0.4 mm mission between two electrically separated circuits. Comparative Tracking Index

The couplers are end-stackable with 2.54 mm lead per DIN IEC 112/VDE0 303, part 1 ..................................................175 spacing. Isolation Resistance =500 V, =25 C................................................................. IO

Creepage and clearance distances of >8.0 mm are

=500 V, =100 C............................................................... IO

achieved with option 6. This version complies with

Storage Temperature Range –55 to +150

IEC 950 (DIN VDE 0805) for reinforced insulation up

Ambient Temperature Range............................................. –55 to +100

to an operation voltage of 400 V or DC.

Junction Temperature ......................................................................100 Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm) ..........................................260

Document Number: 83673 www.vishay.com Revision 17-August-01 2–242