Toshiba TPCS8205 Data Handbook
Summary
This high-performance N-Channel MOSFET is a compact, low-resistance transistor designed for demanding portable electronics applications, including notebook PCs and Li-ion battery systems. The manual provides comprehensive technical details, covering electrical characteristics, thermal management limits, and operational guidelines necessary for robust design integration. It is essential for engineers and designers requiring stable power switching in small form factor computing and portable hardware.
Page 1 Text Content
查询TPCS8205供应商
TPCS8205
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V
D C (Note 1) ID 5
Drain curren JEDEC ―
Pulse (Note 1) IDP 20
JEITA ―
Single-device operation PD (1) 1.1 Drain power TOSHIBA 2-3R1E (Note 3a)
dissipation
(t = 10s) Weight: 0.035 g (typ.)
(Note 2a) Single-device value
at dual operation PD(2) 0.5 (Note 3b) Single-device
Circuit Configuration
operation PD (1) 0.6 Drain power (Note 3a)
dissipation (t = 10s) (Note 2b) Single-device value
at dual operation PD (2) 0.35 (Note 3b)
Single pulse avalanche energy (Note 4) EAS 32.5 m J Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at operation EAR 0.05 m J (Note 2a, Note 3b, Note 5) Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPCS8205 Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 288.11 KB |
| Published | June 02, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What drain current (ID) can the device handle in a pulse over 10 seconds?
The device can handle 5 A as a single-device pulse, or 20A with a repetitive avalanche rating.
What is the maximum allowable channel temperature and storage range for this transistor?
The maximum channel operating temperature (Tch) is 150 °C, while the storage temperature range is -55 to 150 °C.
Is there any specific precaution I should take when handling this component?
Yes, the text states that 'This transistor is an electrostatic sensitive device. Please handle with caution.'
What are the thermal resistance values for single vs. dual operation?
Single-device operation has a thermal resistance (Rth) of 114 °C/W; dual operation is rated at 250 °C/W.