Toshiba TPC8401 User Guide
Summary
Discover the TPC8401 N/P Channel MOSFET, a high-performance silicon transistor designed for demanding electronic and portable equipment applications. This comprehensive manual provides detailed technical specifications, including complete electrical characteristics, maximum ratings, and thermal dissipation data. Ideal for engineers designing low-power systems such as notebooks or battery management circuits (Li-Ion secondary battery applications), the TPC8401 ensures reliable, efficient operation with superior performance in various power regimes.
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TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TPC8401
Lithium Ion Secondary Battery Applications Portable Equipment Applications
Unit: mm
Notebook PCs
Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1m A) N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1m A)
Maximum Ratings (Ta = 25°C)
Rating
Characteristics Symbol P Channel N Channel Unit
JEDEC ―
Drain-source voltage VDSS −30 30 V
JEITA ―
Drain-gate voltage (RGS = 20 kΩ) VDGR −30 30 V
TOSHIBA 2-6J1E
Gate-source voltage VGSS ±20 ±20 V
Weight: 0.080 g (typ.)
DC (Note 1) ID −4.5 6
Drain current
Pulse (Note 1) IDP −18 24 Single-device operation
(Note 3a) PD (1) 1.5 1.5 Drain power Circuit Configuration
dissipation (t = 10s) (Note 2a) Single-device value at
dual operation (Note 3b) PD (2) 1.0 1.0 Single-device operation dissipation (Note 3a) PD (1) 0.75 0.75 Drain power
Single-device value at
(Note 2b)
dual operation (Note 3b) PD (2) 0.45 0.45
Single pulse avalanche energy EAS 26.3
(Note 4a) (Note 4b) m J
Avalanche current IAR −4.5 6 A Repetitive avalanche energy Single-device value at operation EAR 0.10 m J (Note 2a, 3b, 5) Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8401 User Guide
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 11 |
| File Size | 735.84 KB |
| Published | June 04, 2026 |
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Frequently Asked Questions
What is the maximum permissible operating temperature for this transistor?
The channel temperature must be kept below 150°C.
Is this device suitable for mission-critical systems like medical or airplane instruments?
No, it is not warranted for equipment requiring extraordinarily high quality/reliability where failure could cause injury (Unintended Usage).
What is the typical drain-source ON resistance for the P Channel in single-device operation?
The characteristic symbol Rds(ON) for the P Channel is typically 25 mΩ.
Does handling this transistor require special precautions?
Yes, beware that this transistor is an electrostatic sensitive device and must be handled with caution.